| PART |
Description |
Maker |
| 5962-9561307HZX WMS512K8L-15CLC WMS512K8L-15CLCA W |
512Kx8 MONOLITHIC SRAM
BOX 4.38X3.25X0.91BLACK BULK
STD BLK BOX (3.25X4.38X0.9)
STD-I BLK BOX (3.25X4.38X0.9)
BOX END PANEL INFRA-RED A27 SERI 512Kx8整装静态存储器
BOX 4.38X3.25X0.91 WALL MT BLK 512Kx8整装静态存储器
BOX 3.3X5.6X1.5 STD EMI BLACK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT BLK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 GRY 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT GRY 512Kx8整装静态存储器
BOX 6.88X4.88X.9 BLK 512Kx8整装静态存储器
BOX STD ALM (4.88X6.88X.9) 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT GRY 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT BLK 512Kx8整装静态存储器
STD ALMOND BOX (3.25X4.38X0.9) 512Kx8整装静态存储器
BOX 5.63 X 3.26 X .91 GRY 512Kx8整装静态存储器
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
END PANEL W/DB25 FOR A-31 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 GRY 512Kx8整装静态存储器
DIODE, MICRO-MELFDIODE, MICRO-MELF; Voltage, Vrrm:100V; Current, If av:0.15A; Case style:MicroMELF; Current, If max:0.2A; Current, Ifrm:0.45mA; Current, Ifs max:2A; Diameter, External:1.35mm; Diode type:Small signal; Length / Height,
SENSOR HI-IMP 30PSIA DIP PKG
20ns; 512K x 8 monilithic SRAM, SMD 5962-95613
35ns; 512K x 8 monilithic SRAM, SMD 5962-95613
15ns; 512K x 8 monilithic SRAM, SMD 5962-95613
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Man...
White Electronic Designs
|
| K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512K X 8 STANDARD SRAM, 55 ns, PDSO32
512K X 8 STANDARD SRAM, 70 ns, PDSO32
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| WMS512K8L-100DEIE WMS512K8L-100DEIEA WMS512K8L-120 |
100ns; 512K x 8 monolithic SRAM, SMD 5962-95613
120ns; 512K x 8 monolithic SRAM, SMD 5962-95613
70ns; 512K x 8 monolithic SRAM, SMD 5962-95613
85ns; 512K x 8 monolithic SRAM, SMD 5962-95613
|
White Electronic Designs
|
| EDI88257CA EDI88257CA/LPA-C |
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时05555ns
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时055555ns
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
|
White Electronic Designs Corporation
|
| EDI88128C100CB EDI88128C EDI88128LP EDI88128P EDI8 |
70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128K X 8 STATIC RAM CMOS MONOLITHIC
CAPACITOR 150UF 200V ELECT TSHA
128KX8 MONOLITHIC SRAM, SMD 5962-89598 128KX8整体式的SRAM，贴962-89598
CAPACITOR 560UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 680UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 270UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 1200UF 200V ELECT TSHA
100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs
N.A.
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| WS512K8L-20CM WS512K8L-20CQA WS512K8-XCX WS512K8-2 |
512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32
512Kx8 SRAM MODULE, SMD 5962-92078
|
WEDC[White Electronic Designs Corporation]
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| 29F040-90 29F040-55 29F040-70 MX29F040PI-70 MX29F0 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 55 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 4分位[512KX8]的CMOS平等部门闪存
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Macronix International Co., Ltd.
|
